IRGC4060B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.55V

STGD10NC60KDT4

STGD10NC60KDT4

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG8CH29K10F

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.70V

FGP20N60UFDTU

FGP20N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGC4273B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 100A
  • Vce(ON)@25℃(typ): 1.60V

IRG4PF50W

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 900V
  • Ic@100℃: 28A
  • Vce(ON)@25℃(typ): 2.25V

IKD15N60RAATMA1

IKD15N60RAATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGA180N33ATTU

FGA180N33ATTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:330 V
Maximum Continuous Collector Current:180 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IKD04N60RATMA1

IKD04N60RATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4CH71KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 2.97V

IRGP4740D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.7V

IRG4PC60F

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.50V

FGD3245G2_F085

FGD3245G2_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:480 V
Maximum Continuous Collector Current:23 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGB5N60UNDF

FGB5N60UNDF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:10 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRGPS40B120U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 3.12V