更新于 2025-11-08电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 2.15V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 16A,Vce(ON)@25℃(typ): 2.21V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Vce(ON)@25℃(typ): 1.6V
- 高速(1-8kHz)IGBT模块,Vces: 600V,Ic@100℃: 7.7A,Vce(ON)@25℃(typ): 1.66V
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Vce(ON)@25℃(typ): 2.2V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 31 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |