IRGC4263B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Vce(ON)@25℃(typ): 1.7V

NGB8245NT4G

NGB8245NT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:500 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

APT100GN60LDQ4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:229 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IRGC15B120KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 2.46V

IRGP4062-E

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 24A
  • Vce(ON)@25℃(typ): 1.60V

IRG4BC15MD

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 8.6A
  • Vce(ON)@25℃(typ): 1.88V

IRGP4063

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 48A
  • Vce(ON)@25℃(typ): 1.65V

IRG4BC20FDPBF

IRG4BC20FDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:16 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGH25N120FTDS

FGH25N120FTDS

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRG4PH40UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 21A
  • Vce(ON)@25℃(typ): 2.43V

IHW40N60R

IHW40N60R

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

HGTP12N60A4D

HGTP12N60A4D

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:54 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

FGH20N60SFDTU

FGH20N60SFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGC35B60PB

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.85V

IKW40N120H3FKSA1

IKW40N120H3FKSA1

电气特性 Features

Configuration:Single Quad Collector Triple Emitter
Channel Type:N
Maximum Collector Emitter Voltage:400 V
Maximum Gate Emitter Voltage:±6 V
Mounting:Through Hole
Rad Hard:No