IRG4PH50UPBF

IRG4PH50UPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:45 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGA40T65SHD

FGA40T65SHD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

NGB8207BNT4G

NGB8207BNT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:365 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

IKW30N60H3

IKW30N60H3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKW30N60TFKSA1

IKW30N60TFKSA1

电气特性 Features

Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V

IKA10N60T

IKA10N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:11.7 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG7PH42UD1M

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 45A
  • Vce(ON)@25℃(typ): 1.70V

FGH40N60SFTU

FGH40N60SFTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

AUIRG4PH50S

AUIRG4PH50S

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:57 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGW40H120F2

STGW40H120F2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGC50B120UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 3.15V

VS-GA250SA60S

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:400 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Screw
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IKQ120N60TAXKSA1

IKQ120N60TAXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:160 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGPF50N30TTU

FGPF50N30TTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:300 V
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IRGP4072D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 300V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.46V