IRG7CH42UEF
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 1.69V
ISL9V3040D3ST

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 390 V |
| Maximum Continuous Collector Current: | 21 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRGC4275B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 200A
- Vce(ON)@25℃(typ): 1.60V
IGD06N60TATMA1

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IHW20N120R3FKSA1

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±25 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG7PH42UD1
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 45A
- Vce(ON)@25℃(typ): 1.70V
IRGB4715D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.7V
IRG7PH35UD1M
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 25A
- Vce(ON)@25℃(typ): 1.90V
IKB10N60TATMA1

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
HGTG30N60A4

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 75 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGP4069DPBF

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 76 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IGW30N60H3

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGC100B60KC
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.9V
AUIRG4PH50S

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 57 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IKP15N65F5XKSA1

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |

更新于 2026-05-08