
电气特性 Features
- 绝缘栅双极型晶体管单管
- Trans IGBT Chip N-CH 1.2KV 30A
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 500 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±15 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 31 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 55 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |