IGW25N120H3

IGW25N120H3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4PH50KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 24A
  • Vce(ON)@25℃(typ): 2.77V

IGW15T120

IGW15T120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGC15B120UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 3.67V

IGP20N65H5XKSA1

IGP20N65H5XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

SKP06N60

SKP06N60

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IKW08T120

IKW08T120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:16 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4760

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.7V

IRGP4650DPBF

IRGP4650DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:76 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

AUIRGS30B60K

AUIRGS30B60K

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:78 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGW40N120H3FKSA1

IGW40N120H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGW19NC60HD

STGW19NC60HD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:42 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG7PH50K10D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.90V

IRGB4630D

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 600V
  • Ic@100℃: 30A
  • Vce(ON)@25℃(typ): 1.65V

FGB3236_F085

FGB3236_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:330 V
Maximum Continuous Collector Current:44 A
Maximum Gate Emitter Voltage:±12 V
Mounting:Surface Mount
Rad Hard:No