IRGIB7B60KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 8.0A
  • Vce(ON)@25℃(typ): 1.80V

IHW30N60TFKSA1

IHW30N60TFKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGH40N60SMD_F085

FGH40N60SMD_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGS30B60KPBF

IRGS30B60KPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:78 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4PC40FPBF

IRG4PC40FPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:49 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG8CH29K10F

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.70V

IRGSL4062D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 24A
  • Vce(ON)@25℃(typ): 1.60V

FGA30T65SHD

FGA30T65SHD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

SGH30N60RUFDTU

SGH30N60RUFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:48 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG8CH15K10F

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 10A
  • Vce(ON)@25℃(typ): 1.70V

IRGC50B60PB

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 2V

IRGP4072D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 300V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.46V

IRG4BC10UDPBF

IRG4BC10UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4BH20K-S

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 5.0A
  • Vce(ON)@25℃(typ): 3.17V

IRGC35B120KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 2.4V