更新于 2025-03-07电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 70A
- Vce(ON)@25℃(typ): 1.70V
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- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Vce(ON)@25℃(typ): 2.1V
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 130A,Vce(ON)@25℃(typ): 2.00V
- 超高速(8-30kHz)IGBT模块,Vces: 300V
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 11 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |