首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 IGW30N60H3FKSA1 IGW30N60H3FKSA1 更新于 2025-07-08 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No