首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 NGTG30N60FWG NGTG30N60FWG 更新于 2025-09-17 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±30 VMounting:Through HoleOperating Temperature:-55 to 150 ℃Rad Hard:No