达林顿管

KSD560YTU

KSD560YTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:5000@3A@2V
Maximum Collector Emitter Saturation Voltage:1.5@3mA@3A V
Maximum Collector Base Voltage:150 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

TIP127

TIP127

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

A2982ELW

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.8@100mA|1.9@225mA|2@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

2SD2143TL

2SD2143TL

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:70 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:70 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

BDX33CG

BDX33CG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@6mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

BST52,135

BST52,135

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

2N6387G

2N6387G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@0.01A@5A|3@0.1A@10A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

BCX38

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BCX38内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-08-05 Tag标签:达林顿管

PZTA14,115

PZTA14,115

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

SST6427T116

SST6427T116

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

NZT605

NZT605

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:110 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:200@2A@5V|300@1.5A@5V|2000@1A@5V|5000@500mA@5V|2000@50mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.25mA@250mA|1.5@1mA@1A V
Maximum Collector Base Voltage:140 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

MPSA77_D74Z

MPSA77_D74Z

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:10000@100mA@5V|10000@10mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

2SD2142

2SD2142

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    2SD2142内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-08-05 Tag标签:达林顿管

ULQ2801A

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管

TIP112G

TIP112G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-05 Tag标签:达林顿管