达林顿管

BCV46E6327

BCV46E6327

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@500mA@5V|4000@10mA@5V|2000@100uA@1V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

TIP127

TIP127

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

ULN2804APG(O,M)

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

TIP112TU

TIP112TU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

MJD112T4

MJD112T4

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

MJE802

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@4A@3V|750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:3@40mA@4A|2.5@30mA@1.5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

SMMBTA14LT1G

SMMBTA14LT1G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:20000@100mA@5V|10000@10mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

FZT696BTC

FZT696BTC

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:180 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:500@100mA@5V|150@200mA@5V
Maximum Collector Emitter Saturation Voltage:0.2@0.5mA@50mA|0.2@2mA@100mA|0.25@5mA@200mA V
Maximum Collector Base Voltage:180 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

MJD112

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD112内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-10 Tag标签:达林顿管

2STW100

2STW100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:25 A
Minimum DC Current Gain:600@5A@3V|500@10A@3V|300@20A@3V
Maximum Collector Emitter Saturation Voltage:1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

BST51,135

BST51,135

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

ULN2004AP(M)

ULN2004AP(M)

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

DS2003TM/NOPB

DS2003TM/NOPB

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:55 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

MJD117T4

MJD117T4

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管

ZTX705

ZTX705

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:3000@10mA@5V|3000@100mA@5V|3000@1A@5V|2000@2A@5V
Maximum Collector Emitter Saturation Voltage:1.3@1mA@1A|2.5@2mA@2A V
Maximum Collector Base Voltage:140 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-10 Tag标签:达林顿管