达林顿管

FJB102TM

FJB102TM

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MPSW45AG

MPSW45AG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:25000@200mA@5V|15000@500mA@5V|4000@1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@2mA@1A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

FZT696BTA

FZT696BTA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:180 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:500@100mA@5V|150@200mA@5V
Maximum Collector Emitter Saturation Voltage:0.2@0.5mA@50mA|0.2@2mA@100mA|0.25@5mA@200mA V
Maximum Collector Base Voltage:180 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP125

TIP125

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULN2065B

ULN2065B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

CZT122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    CZT122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-28 Tag标签:达林顿管

2N6036

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V|500@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MJH6284G

MJH6284G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TD62083AFNG(5,S,EL)

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BU931P

BU931P

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:400 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:300@5A@10V
Maximum Collector Emitter Saturation Voltage:1.6@70mA@7A|1.8@100mA@8A|1.8@250mA@10A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP147FTU

TIP147FTU

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:500@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MMBT6427

MMBT6427

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

2SD2143TL

2SD2143TL

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:70 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:70 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BD680AG

BD680AG

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

SN75469NE4

SN75469NE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管