TIP112G

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电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	150 V
Peak DC Collector Current:	15 A
Minimum DC Current Gain:	100@15A@5V|400@10A@5V
Maximum Collector Emitter Saturation Voltage:	2.5@100mA@10A|4@150mA@15A V
Maximum Collector Base Voltage:	150 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-07

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	10 A
Minimum DC Current Gain:	750@3A@3V
Maximum Collector Emitter Saturation Voltage:	2.5@6mA@3A V
Maximum Collector Base Voltage:	100 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-07

电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	750@3A@3V
Maximum Collector Emitter Saturation Voltage:	2@12mA@3A V
Maximum Collector Base Voltage:	100 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-07

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	25 A
Minimum DC Current Gain:	600@5A@3V|500@10A@3V|300@20A@3V
Maximum Collector Emitter Saturation Voltage:	1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-07

电气特性 Features

Configuration:	Array 7
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:	1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:	Through Hole
Rad Hard:	Yes

更新于 2025-03-07