达林顿管

TIP100G

TIP100G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULN2002D1013TR

ULN2002D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MMBTA28

MMBTA28

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@100mA@5V|10000@10mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.01mA@10mA|1.5@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BDX33CTU

BDX33CTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@4A|2.5@6mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP110

TIP110

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

PMBTA13,215

PMBTA13,215

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP135-S

TIP135-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|3@30mA@6A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULN2801A

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULQ2004ATDRG4Q1

ULQ2004ATDRG4Q1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@0.25mA@0.1A|1.3@0.35mA@0.2A|1.6@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MJD44E3T4G

MJD44E3T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@5V
Maximum Collector Emitter Saturation Voltage:1.5@10mA@5A|2@20mA@10A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BC516,126

BC516,126

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:30000@20mA@2V
Maximum Collector Emitter Saturation Voltage:1@0.01mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BDX43

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA|1.6@1mA@1A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MJE802G

MJE802G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BCV26

BCV26

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:4000@1A@5V|10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MPSA29

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MPSA29内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-28 Tag标签:达林顿管