达林顿管

TIP132-S

TIP132-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|3@30mA@6A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

NJD35N04T4G

NJD35N04T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:2000@2A@2V|300@4A@2V
Maximum Collector Emitter Saturation Voltage:1.5@20mA@2A V
Maximum Collector Base Voltage:700 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MPSA14RLRPG

MPSA14RLRPG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULN2003ADR2G

ULN2003ADR2G

电气特性 Features

Configuration:Array 7
Type:NPN
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BDW93C

BDW93C

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@3A@3V|750@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@20mA@5A|3@100mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULN2002A

ULN2002A

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP162-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:380 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:200@4A@2.2V
Maximum Collector Emitter Saturation Voltage:2.8@0.1A@6.5A|2.9@1A@10A V
Maximum Collector Base Voltage:380 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MPSA29

MPSA29

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.01mA@10mA|1.5@0.1mA@100mA V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BD679AS

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BSP50H6327XTSA1

BSP50H6327XTSA1

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BU931P

BU931P

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:400 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:300@5A@10V
Maximum Collector Emitter Saturation Voltage:1.6@70mA@7A|1.8@100mA@8A|1.8@250mA@10A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP137-S

TIP137-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|3@30mA@6A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MMBTA64

MMBTA64

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MMBTA64内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-28 Tag标签:达林顿管

A2982SLW-T

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.8@100mA|1.9@225mA|2@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MPSA14G

MPSA14G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管