达林顿管

TIP151-S

TIP151-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:7 A
Minimum DC Current Gain:150@2.5A@5V|50@5A@5V|15@7A@5V
Maximum Collector Emitter Saturation Voltage:1.5@10mA@1A|1.5@100mA@2A|2@250mA@5A V
Maximum Collector Base Voltage:350 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ULN2002D1013TR

ULN2002D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

TIP142TTU

TIP142TTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

MJE802

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@4A@3V|750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:3@40mA@4A|2.5@30mA@1.5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

TIP125

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP125内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BDX33A-S

BDX33A-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ULN2075B

ULN2075B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BD678

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

KSH112TM

KSH112TM

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BSP60,115

BSP60,115

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:60 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

TIP120

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP120内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BUB941ZTT4

BUB941ZTT4

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:300@5A@10V
Maximum Collector Emitter Saturation Voltage:1.8@100mA@8A|1.8@250mA@10A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ZDT6702TA

电气特性 Features

Configuration:Dual Dual Collector
Type:NPN|PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1.75 A
Minimum DC Current Gain:5000@10mA@5V@NPN|5000@500mA@5V@NPN|3500@2A@5V@NPN|500@4A@5V@NPN|2000@10mA@5V@PNP|2000@500mA@5V@PNP|1500@2A@5V@PNP|1000@4A@5V@PNP
Maximum Collector Emitter Saturation Voltage:0.95@0.5mA@0.5A@NPN|1.28@2mA@1.75A@NPN|1@0.5mA@0.5A@PNP|1.28@2mA@1.75A@PNP V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

TIP127

TIP127

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ULN2003ADRE4

ULN2003ADRE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管