达林顿管

TIP112

TIP112

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

BCX38

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BCX38内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MMBTA28

MMBTA28

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MMBTA28内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MJ11015G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:30 A
Minimum DC Current Gain:200@30A@5V|1000@20A@5V
Maximum Collector Emitter Saturation Voltage:3@200mA@20A|4@300mA@30A V
Maximum Collector Base Voltage:120 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MPSA27RLRAG

MPSA27RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MJD112T4

MJD112T4

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULN2003AD

ULN2003AD

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULN2066B

ULN2066B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

2N6426G

2N6426G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:20000@10mA@5V|30000@100mA@5V|20000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

MPSA13RLRMG

MPSA13RLRMG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULQ2003D1013TRY

ULQ2003D1013TRY

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ULN2003AIDRE4

ULN2003AIDRE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

ZTX605STZ

ZTX605STZ

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:2000@50mA@5V|5000@500mA@5V|2000@1A@5V|500@2A@5V
Maximum Collector Emitter Saturation Voltage:1@0.25mA@250mA|1.5@1mA@1A V
Maximum Collector Base Voltage:140 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

2SB1183TL

2SB1183TL

电气特性 Features

Configuration:Single
Type:PNP
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@0.5A@3V
Maximum Collector Emitter Saturation Voltage:1.5@1.2mA@0.6A V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管

BD677ASTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-08 Tag标签:达林顿管