达林顿管

MMBTA13LT3G

MMBTA13LT3G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

TIP121-S

TIP121-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

FZT689BTA

FZT689BTA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:20 V
Peak DC Collector Current:3 A
Minimum DC Current Gain:500@100mA@2V|400@2A@2V|150@6A@2V
Maximum Collector Emitter Saturation Voltage:0.1@0.5mA@0.1A|0.5@10mA@2A|0.45@20mA@3A V
Maximum Collector Base Voltage:20 V
Mounting:Surface Mount
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:2000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

MJD127TF

MJD127TF

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@8A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BST52

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BST52内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-08-07 Tag标签:达林顿管

TIP121

TIP121

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BC517RL1G

BC517RL1G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:30000@20mA@2V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BDW42G

BDW42G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:250@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@50mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BCV26E6327HTSA1

BCV26E6327HTSA1

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@100uA@1V|10000@10mA@5V|20000@100mA@5V|4000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

MJD128T4G

MJD128T4G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:120 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

2SD2195T100

2SD2195T100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BCV49H6327XTSA1/SN

BCV49H6327XTSA1/SN

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

TD62783AFG(O,S,EL)

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:2@350mA|1.9@225mA|1.8@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管

BCV47,235

BCV47,235

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@1mA@5V|4000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-07 Tag标签:达林顿管