达林顿管

BUB323ZT4G

BUB323ZT4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:500@5A@4.6V
Maximum Collector Emitter Saturation Voltage:1.6@70mA@7A|1.8@0.1A@8A|1.7@0.25A@10A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

TIP126

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP126内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-12 Tag标签:达林顿管

ULQ2003ADG4

ULQ2003ADG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@100mA|1.4@200mA|1.7@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BCV47 E6327

BCV47 E6327

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.5A@5V|10000@100mA@5V|4000@10mA@5V|2000@0.1mA@1V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BD652-S

BD652-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|2.5@50mA@5A V
Maximum Collector Base Voltage:140 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

ULN2004D1013TR

ULN2004D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

MPSA14

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MPSA14内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-12 Tag标签:达林顿管

SG2823J-883B

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:95 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:Yes
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

KSH127TM

KSH127TM

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

MJD117G

MJD117G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

MJF122G

MJF122G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@500mA@3V|2000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|3.5@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BCV47E6433HTMA1

BCV47E6433HTMA1

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.5A@5V|10000@100mA@5V|4000@10mA@5V|2000@0.1mA@1V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

ULN2804APG(O,NM)

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BD677AS

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

KSH122ITU

KSH122ITU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@8A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管