达林顿管

BD682S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

MMBTA63

MMBTA63

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BSP52T1G

BSP52T1G

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

TIP126TU

TIP126TU

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

PMBTA13,215

PMBTA13,215

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

SN75469N

SN75469N

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BDX33A-S

BDX33A-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

TIP126

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP126内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-12 Tag标签:达林顿管

2STW200

2STW200

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:25 A
Minimum DC Current Gain:600@5A@3V|500@10A@3V|300@20A@3V
Maximum Collector Emitter Saturation Voltage:1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BSP52T3G

BSP52T3G

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

2N6034G

2N6034G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V|500@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BD681STU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

TIP110TU

TIP110TU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

BD680AS

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管

PMBTA14,215

PMBTA14,215

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-12 Tag标签:达林顿管