达林顿管

BCV29H6327XTSA1

BCV29H6327XTSA1

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

MMBTA64-7-F

MMBTA64-7-F

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@100uA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

ULN2804APG,N

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Operating Temperature:-40 to 85 ℃
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

BDW46G

BDW46G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:250@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@50mA@10A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

BDX34CG

BDX34CG

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@6mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

BCV49,115

BCV49,115

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@1mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

MMBTA63

MMBTA63

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

2SB1580

2SB1580

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

MJD117

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD117内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-29 Tag标签:达林顿管

BCV46TA

BCV46TA

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.1mA@1V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

MPSA14RLRAG

MPSA14RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

BDX33A-S

BDX33A-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

MJD122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-29 Tag标签:达林顿管

MJD6039T4G

MJD6039T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管

SN75469D

SN75469D

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-29 Tag标签:达林顿管