MJB5742T4G

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电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	120 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	750@3A@3V
Maximum Collector Emitter Saturation Voltage:	2@12mA@3A|2.5@50mA@5A V
Maximum Collector Base Voltage:	140 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-16

电气特性 Features

Configuration:	Octal
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:	1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-09-16

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	10 A
Minimum DC Current Gain:	1000@5A@3V
Maximum Collector Emitter Saturation Voltage:	2@20mA@5A|4@50mA@10A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-16

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

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更新于 2025-09-16

电气特性 Features

Configuration:	Octal
Type:	NPN|PNP
Peak DC Collector Current:	0.5 A
Maximum Collector Emitter Saturation Voltage:	2@350mA|1.9@225mA|1.8@100mA V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-16