BST61,115

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电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	2 A
Minimum DC Current Gain:	500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:	2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:	100 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	4 A
Minimum DC Current Gain:	100@4A@3V|750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:	2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	10 A
Minimum DC Current Gain:	1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:	2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:	100 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-03-10