SMS7630-061
电气特性 Features
| Configuration: | Single |
| Type: | Schottky Diode |
| Maximum Reverse Voltage: | 1 V |
| Frequency Range: | Ka |
| Maximum Forward Voltage: | 240@1mA V |
| Maximum Power Dissipation: | 75 mW |
| Typical Video Resistance: | 7(Max) kOhm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
HSMS-286E-TR2G

电气特性 Features
| Configuration: | Dual Common Anode |
| Type: | Schottky Diode |
| Maximum Reverse Voltage: | 4 V |
| Frequency Range: | UHF|SHF |
| Maximum Diode Capacitance: | 0.25(Typ) pF |
| Maximum Forward Voltage: | 0.35@1mA V |
| Typical Video Resistance: | 5 kOhm |
| Typical Voltage Sensitivity: | 25@5.8GHz mV/uW |
| Typical Tangential Sensitivity: | -55@5.8GHz dBm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
BAS40WS
电气特性 Features
- 类型: 开关二极管
- Pd = 350mW
- Io = 150mA
- Vr = 75V
- Vf = 1.25V
- Ir = 1uA
- Trr = 4ns
- 内部电路图:

更多相似二极管产品参数说明表
BAS40-04T
电气特性 Features
- 类型: 开关二极管
- Pd = 350mW
- Io = 150mA
- Vr = 75V
- Vf = 1.25V
- Ir = 1uA
- Trr = 4ns
- 内部电路图:

更多相似二极管产品参数说明表
SMS7630-079LF
电气特性 Features
| Configuration: | Single |
| Type: | Schottky Diode |
| Maximum Reverse Voltage: | 1(Min) V |
| Frequency Range: | SHF |
| Maximum Diode Capacitance: | 0.3(Typ) pF |
| Maximum Forward Voltage: | 0.24@1mA V |
| Maximum Power Dissipation: | 75 mW |
| Typical Video Resistance: | 5 kOhm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
BAT64X
电气特性 Features
- 类型: 开关二极管
- Pd = 350mW
- Io = 150mA
- Vr = 75V
- Vf = 1.25V
- Ir = 1uA
- Trr = 4ns
- 内部电路图:

更多相似二极管产品参数说明表
HSMS-8207-TR2G

电气特性 Features
| Configuration: | Quad Ring |
| Minimum Reverse Voltage: | 4 V |
| Frequency Range: | X|Ku |
| Maximum VSWR: | 1.2(Typ) |
| Maximum Conversation Loss: | 6.3(Typ) dB |
| Maximum Diode Capacitance: | 0.26 pF |
| Maximum Forward Voltage: | 0.35@1mA V |
| Maximum IF Impedance: | 150(Typ) Ohm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
CDF7621-000
电气特性 Features
| Configuration: | Single |
| Type: | Schottky Diode |
| Maximum Reverse Voltage: | 2 V |
| Frequency Range: | Ka |
| Maximum Diode Capacitance: | 0.1 pF |
| Maximum Forward Voltage: | 0.35 V |
| Maximum Power Dissipation: | 75 mW |
| Typical Video Resistance: | 680 kOhm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
HSMS-286P-TR1G

电气特性 Features
| Configuration: | Quad Bridge |
| Type: | Schottky Diode |
| Maximum Reverse Voltage: | 4 V |
| Frequency Range: | UHF|SHF |
| Maximum Diode Capacitance: | 0.25(Typ) pF |
| Maximum Forward Voltage: | 0.35@1mA V |
| Typical Video Resistance: | 5 kOhm |
| Typical Voltage Sensitivity: | 25@5.8GHz mV/uW |
| Typical Tangential Sensitivity: | -55@5.8GHz dBm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
BAS70DW-05
电气特性 Features
- 类型: 开关二极管
- Pd = 350mW
- Io = 150mA
- Vr = 75V
- Vf = 1.25V
- Ir = 1uA
- Trr = 4ns
- 内部电路图:

更多相似二极管产品参数说明表
HSCH-5332
电气特性 Features
| Configuration: | Single |
| Type: | Schottky Diode |
| Maximum Reverse Voltage: | 4 V |
| Frequency Range: | UHF|SHF |
| Maximum Diode Capacitance: | 0.15 pF |
| Maximum Forward Voltage: | 0.375@1mA V |
| Maximum Power Dissipation: | 150 mW |
| Typical Video Resistance: | 1.4|1800 kOhm |
| Typical Voltage Sensitivity: | 6.6@10GHz|10@10GHz mV/uW |
| Typical Tangential Sensitivity: | -54@10GHz|-44@10GHz dBm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
HSMS-286R-TR2G

电气特性 Features
| Configuration: | Quad Ring |
| Type: | Schottky Diode |
| Maximum Reverse Voltage: | 4 V |
| Frequency Range: | UHF|SHF |
| Maximum Diode Capacitance: | 0.25(Typ) pF |
| Maximum Forward Voltage: | 0.35@1mA V |
| Typical Video Resistance: | 5 kOhm |
| Typical Voltage Sensitivity: | 25@5.8GHz mV/uW |
| Typical Tangential Sensitivity: | -55@5.8GHz dBm |
| Mounting: | Surface Mount |
| Rad Hard: | No |
1SS389
电气特性 Features
- 类型: 开关二极管
- Pd = 350mW
- Io = 150mA
- Vr = 75V
- Vf = 1.25V
- Ir = 1uA
- Trr = 4ns
- 内部电路图:

更多相似二极管产品参数说明表
BAS40-06T
电气特性 Features
- 类型: 开关二极管
- Pd = 350mW
- Io = 150mA
- Vr = 75V
- Vf = 1.25V
- Ir = 1uA
- Trr = 4ns
- 内部电路图:

更多相似二极管产品参数说明表
RB520S-30
电气特性 Features
- 类型: 开关二极管
- Pd = 350mW
- Io = 150mA
- Vr = 75V
- Vf = 1.25V
- Ir = 1uA
- Trr = 4ns
- 内部电路图:


更新于 2025-11-06