BAP64-05

BAP64-05

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BAP64-05内部电路图

更多相似二极管产品参数说明表

BAR6306E6327HTSA1

BAR6306E6327HTSA1

电气特性 Features

Configuration:Dual Common Anode
Maximum Reverse Voltage:50 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1.2 V
Frequency Range:SHF
Maximum Diode Capacitance:0.3@5V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:0.075 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

HSMP-3895-TR1G

HSMP-3895-TR1G

电气特性 Features

Configuration:Dual Parallel
Maximum Reverse Voltage:100 V
Maximum Diode Capacitance:0.3@5V pF
Typical Carrier Life Time:0.2 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

HSMP-389V-BLKG

HSMP-389V-BLKG

电气特性 Features

Configuration:Dual
Maximum Reverse Voltage:100 V
Maximum Diode Capacitance:0.3@5V pF
Typical Carrier Life Time:0.2 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

BAR6502VH6327XTSA1

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:30 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1 V
Maximum Diode Capacitance:0.8@3V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:0.08 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

HSMP-3810-TR1G

HSMP-3810-TR1G

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:100 V
Maximum Diode Capacitance:0.35@50V pF
Typical Carrier Life Time:1.5 us
Mounting:Surface Mount
Type:Attenuator
Rad Hard:No

HMPP-389T-TR1

电气特性 Features

Configuration:Single Dual Common Anode Dual Common Cathode
Maximum Reverse Voltage:100 V
Frequency Range:SHF
Maximum Diode Capacitance:0.3@5V pF
Typical Carrier Life Time:0.2 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

HSMP-4820-BLKG

HSMP-4820-BLKG

电气特性 Features

Configuration:Single Dual Anode
Maximum Reverse Voltage:50 V
Frequency Range:UHF|SHF
Maximum Diode Capacitance:1.2@0V pF
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

BAP51-02

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BAP51-02内部电路图

更多相似二极管产品参数说明表

HSMP-386J-TR2G

电气特性 Features

Configuration:Octal
Maximum Reverse Voltage:100 V
Maximum Diode Capacitance:1.25@50V pF
Maximum Power Dissipation:2000 mW
Typical Carrier Life Time:0.26 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

BA89202VH6127XTSA1

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:35 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1 V
Maximum Diode Capacitance:1.1@3V pF
Typical Carrier Life Time:0.12 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

HSMP-386F-TR1G

HSMP-386F-TR1G

电气特性 Features

Configuration:Dual Common Cathode
Maximum Reverse Voltage:50 V
Maximum Diode Capacitance:0.2(Typ)@50V pF
Typical Carrier Life Time:0.5 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

HSMP-3864-TR2G

HSMP-3864-TR2G

电气特性 Features

Configuration:Dual Common Cathode
Maximum Reverse Voltage:50 V
Maximum Diode Capacitance:0.2(Typ)@50V pF
Typical Carrier Life Time:0.5 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

HSMP-3815-BLKG

HSMP-3815-BLKG

电气特性 Features

Configuration:Dual Series
Maximum Reverse Voltage:100 V
Maximum Diode Capacitance:0.35@50V pF
Typical Carrier Life Time:1.5 us
Mounting:Surface Mount
Type:Attenuator
Rad Hard:No

BAP70-04W,115

BAP70-04W,115

电气特性 Features

Configuration:Dual Series
Maximum Reverse Voltage:50 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1.1@50mA V
Maximum Diode Capacitance:0.3@20V pF
Maximum Power Dissipation:260 mW
Typical Carrier Life Time:1.25 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No