更新于 2025-12-27
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 70.0m?
- RDS(on) Max@4.5V: 130.0mΩ
- Qg(Typ): 27.0nC
- Rth(JC): 50 (JA)K/W
IRF7205
相关文章
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 140W,Id@TC 25C: -23A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 19.4mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 240.0mΩ,Qg(Typ): 33nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 65.0mΩ,Qg(Typ): 42.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 89W,Id@TC 25C: -28A
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -23A