更新于 2025-03-06
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -40V
- Vgs: 20V
- RDS(on) Max@10V: 41.0mΩ
- RDS(on) Max@4.5V: 70.0mΩ
- Qg(Typ): 53.0nC
- Rth(JC): 50 (JA)K/W
IRF7241
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- P沟道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 50.0mΩ,Qg(Typ): 10.0nC,Rth(JC): 100 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 2.9mΩ,RDS(on) Max@4.5V: 4.8m?,Qg(Typ): 130.0nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 113W
- P沟道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 14.0mΩ,Qg(Typ): 38nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 50.0mΩ,Qg(Typ): 10.0nC,Rth(JC): 75 (JA)K/W
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |