IRFS23N20D

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 30V
  • RDS(on) Max@10V: 100.0mΩ
  • Id: 24A

IRFI4229

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 250V
  • Vgs: 30V
  • RDS(on) Max@10V: 46.0mΩ
  • Id: 19A

IRL3705ZL

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 16V
  • RDS(on) Max@10V: 8.0mΩ
  • Id: 86A

IRFP1405

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 20V
  • RDS(on) Max@10V: 5.3mΩ
  • Id: 160A

IRFH7185

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 5.2mΩ
  • Id: 123A

IRFP250M

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 20V
  • RDS(on) Max@10V: 75.0mΩ
  • Id: 30A

IRFR7740

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 75V
  • Vgs: 20V
  • RDS(on) Max@10V: 7.2mΩ
  • Id: 87A

5HN01C-TB-E

5HN01C-TB-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:50 V
Maximum Continuous Drain Current:100 mA
Maximum Gate Source Voltage:±20 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

MMBFU310LT1G

MMBFU310LT1G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:25 V
Maximum Gate Source Voltage:25 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

2SK389BL

电气特性 Features

Configuration:Dual
Channel Type:N
Maximum Drain Gate Voltage:-50 V
Operating Temperature:-55 to 125 ℃
Mounting:Through Hole
Rad Hard:No

IRFH7191

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 8mΩ
  • Id: 80A

MMBF4391LT1G

MMBF4391LT1G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:30 V
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount

IRF7831PBF-1

IRF7831PBF-1

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 12V
  • RDS(on) Max@10V: 3.6mΩ

IRF3205ZL

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 20V
  • RDS(on) Max@10V: 6.5mΩ
  • Id: 110A

IRLML2060

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 60V
  • Vgs: 16V
  • RDS(on) Max@10V: 480.0mΩ