IRF520NS

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 200.0mΩ
  • Id: 9.5A

MMBF4392

MMBF4392

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Gate Source Voltage:-30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRF3709ZS

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 6.3mΩ
  • Id: 87A

IRF8113

IRF8113

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 6.0mΩ

BFR31,215

BFR31,215

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:25 V
Maximum Continuous Drain Current:10 mA
Maximum Gate Source Voltage:-25 V
Maximum Drain Gate Voltage:-25 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRFB7545

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 60V
  • Vgs: 20V
  • RDS(on) Max@10V: 5.9mΩ
  • Id: 95A

IRL1404Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 16V
  • RDS(on) Max@10V: 3.1mΩ
  • Id: 200A

IRFR120Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 190.0mΩ
  • Id: 8.7A

IRFS4410

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 10.0mΩ
  • Id: 96A

IRFR825

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 500V
  • Vgs: 20V
  • RDS(on) Max@10V: 1300.0mΩ
  • Id: 6.0A

ATF-35143-TR2G

ATF-35143-TR2G

电气特性 Features

Configuration:Single Dual Source
Channel Type:N
Maximum Drain Source Voltage:5.5 V
Maximum Continuous Drain Current:80 mA
Maximum Gate Source Voltage:-5 V
Maximum Drain Gate Voltage:-5 V
Operating Temperature:-65 to 160 ℃
Mounting:Surface Mount
Rad Hard:No

IRFU3707Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 9.5mΩ
  • Id: 39A

IRFH7440

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 20V
  • RDS(on) Max@10V: 2.4mΩ
  • Id: 159A

IRLU3802

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 12V
  • Vgs: 12V
  • Id: 60A

IRF6619

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 20V
  • Vgs: 20V
  • RDS(on) Max@10V: 2.2mΩ