3SK263-5-TG-E

电气特性 Features

Configuration:Single Dual Gate
Channel Type:N
Maximum Drain Source Voltage:15 V
Maximum Continuous Drain Current:30 mA
Maximum Gate Source Voltage:8 V
Operating Temperature:-55 to 125 ℃
Mounting:Surface Mount
Rad Hard:No

IRL1404

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 20V
  • RDS(on) Max@10V: 4.0mΩ
  • Id: 160A

IRFB3004

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 20V
  • RDS(on) Max@10V: 1.75mΩ
  • Id: 340A

IRFP3077

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 75V
  • Vgs: 20V
  • RDS(on) Max@10V: 3.3mΩ
  • Id: 200A

IRFS4010-7P

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 4.0mΩ
  • Id: 190A

IRF1404

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 20V
  • RDS(on) Max@10V: 4.0mΩ
  • Id: 162A

IRFH4213D

电气特性 Features

  • 集成肖特基二极管的N沟道功率MOS管
  • Vbrdss: 25V
  • Vgs: 20V
  • RDS(on) Max@10V: 1.35mΩ
  • Id: 100A

SMMBF4393LT1G

SMMBF4393LT1G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:30 V
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRF7607

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 20V
  • Vgs: 12V

BSR56,215

BSR56,215

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:40 V
Maximum Continuous Drain Current:50 mA
Maximum Gate Source Voltage:-40 V
Maximum Drain Gate Voltage:40 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRF8788PBF-1

IRF8788PBF-1

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 2.8mΩ

IRF6644

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 13.0mΩ

IRLL024Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 16V
  • RDS(on) Max@10V: 60.0mΩ

IRF8788

IRF8788

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 2.8mΩ

IRLI520N

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 16V
  • RDS(on) Max@10V: 180.0mΩ
  • Id: 7.7A