3SK263-5-TG-E
电气特性 Features
Configuration: | Single Dual Gate |
Channel Type: | N |
Maximum Drain Source Voltage: | 15 V |
Maximum Continuous Drain Current: | 30 mA |
Maximum Gate Source Voltage: | 8 V |
Operating Temperature: | -55 to 125 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRL1404
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 4.0mΩ
- Id: 160A
IRFB3004
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 1.75mΩ
- Id: 340A
IRFP3077
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 3.3mΩ
- Id: 200A
IRFS4010-7P
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 4.0mΩ
- Id: 190A
IRF1404
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 4.0mΩ
- Id: 162A
IRFH4213D
电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 1.35mΩ
- Id: 100A
SMMBF4393LT1G

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Drain Source Voltage: | 30 V |
Maximum Gate Source Voltage: | 30 V |
Maximum Drain Gate Voltage: | 30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRF7607
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 12V
BSR56,215

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Drain Source Voltage: | 40 V |
Maximum Continuous Drain Current: | 50 mA |
Maximum Gate Source Voltage: | -40 V |
Maximum Drain Gate Voltage: | 40 V |
Operating Temperature: | -65 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRF6644
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 13.0mΩ
IRLL024Z
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 16V
- RDS(on) Max@10V: 60.0mΩ
IRLI520N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 16V
- RDS(on) Max@10V: 180.0mΩ
- Id: 7.7A