IRFB4212
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 72.5mΩ
- Id: 18A
更新于 2026-08-08PMBFJ310,215
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | -25 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRFSL4020
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 105.0mΩ
- Id: 18A
IRF3205S
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 8.0mΩ
- Id: 110A
IRFI3205
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 8.0mΩ
- Id: 56A
IRF6611
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 2.6mΩ
IRF1018E
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 8.4mΩ
- Id: 79A
IRFH5304
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 4.5mΩ
J112_D26Z
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
PMBF4393,215
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 40 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | 40 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRFBA1404P
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 3.7mΩ
- Id: 206A
IRFB4615
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 20V
- RDS(on) Max@10V: 39.0mΩ
- Id: 35A
IRFZ44NL
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 17.5mΩ
- Id: 35A
IRF640N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 150.0mΩ
- Id: 18A