更新于 2025-07-07电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 7.0mΩ
- Id: 140A
相关文章
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 10.0mΩ,Id: 89A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 13.6mΩ,Id: 51A
- N沟道功率MOS管,Vbrdss: 20V,Vgs: 12V
- 场效应晶体管,NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 30V,RDS(on) Max@10V: 23.0mΩ,Id: 94A