更新于 2025-03-07
电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 12V
IRF7807D1
相关文章
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 5.3mΩ,Id: 160A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 26.0mΩ,Id: 48A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 12V,RDS(on) Max@10V: 7.5mΩ
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | -35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -65 to 200 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |