电气特性 Features
- 场效应晶体管
- NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |