更新于 2025-11-06
电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 25.0mΩ
IRF7807VD1PBF-1
相关文章
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 8.0mΩ,Id: 140A
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 12.0mΩ,Id: 57A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 2.5mΩ,Id: 150A
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single Dual Gate |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | 8 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |