IRGB4610DPBF

IRGB4610DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:16 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGP20B120U-E

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 3.05V

IRGP4062DPBF

IRGP4062DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:48 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGP4630DPBF

IRGP4630DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:47 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGAF40N60UFDTU

FGAF40N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGB19NC60KDT4

STGB19NC60KDT4

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:35 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRGR4607DPBF

IRGR4607DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:11 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IHW30N90TFKSA1

IHW30N90TFKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:900 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGA40N65SMD

FGA40N65SMD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKD04N60RFATMA1

IKD04N60RFATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGH40N60UFDTU

FGH40N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGL40N120ANTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:64 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRG4BC30W

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 2.10V

IRG4PSC71UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:85 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

NGB8204ANT4G

NGB8204ANT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:18 A
Maximum Gate Emitter Voltage:18 V
Mounting:Surface Mount
Rad Hard:No