IRGPS66160D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 160A
- Vce(ON)@25℃(typ): 1.65V
更新于 2026-05-04IRGP6660D
电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 600V
- Ic@100℃: 60A
- Vce(ON)@25℃(typ): 1.65V
IKW30N60TFKSA1
电气特性 Features
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±20 V |
STGB10NB37LZT4
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 440 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | 16 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4BC15MD
电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 8.6A
- Vce(ON)@25℃(typ): 1.88V
ISL9V5045S3ST
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 445 V |
| Maximum Continuous Collector Current: | 51 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4BC15UD-L
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 7.8A
- Vce(ON)@25℃(typ): 2.02V
STGF10NC60HD
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 9 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IHW40N135R3FKSA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1350 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
FGA30N60LSDTU
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGP4266D
电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 650V
- Ic@100℃: 90A
- Vce(ON)@25℃(typ): 1.70V
IKW25N120T2FKSA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 50 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
HGTP7N60A4
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 34 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
FGH25T120SMD_F155
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 50 A |
| Maximum Gate Emitter Voltage: | ±25 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
IRG7PH35UD1M
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 25A
- Vce(ON)@25℃(typ): 1.90V