FGPF4533

FGPF4533

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:330 V
Maximum Continuous Collector Current:0.2 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IGW50N60H3

IGW50N60H3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

NGD8201ANT4G

NGD8201ANT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:440 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

IGW15N120H3FKSA1

IGW15N120H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGS10B60KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 1.80V

GT60J323(Q)

GT60J323(Q)

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRG4PC50F

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 39A
  • Vce(ON)@25℃(typ): 1.45V

SKW20N60HS

SKW20N60HS

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:36 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGS14C40LTRLP

IRGS14C40LTRLP

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:370 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:10 V
Mounting:Surface Mount
Rad Hard:No

IRG4PC40FD

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 27A
  • Vce(ON)@25℃(typ): 1.50V

IRG4BH20K-L

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 5.0A
  • Vce(ON)@25℃(typ): 3.17V

IRGC30B60KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.95V

FGH50T65UPD

FGH50T65UPD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

FGAF40N60UFDTU

FGAF40N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

SGL160N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:160 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No