FGA25N120ANTDTU_F109

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 50 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
SGD02N120

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 6.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
IRGP50B60PD1-E
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Ic@100℃: 45A
- Vce(ON)@25℃(typ): 2.00V
IRG8CH76K10F
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 75A
- Vce(ON)@25℃(typ): 1.70V
IRG4PSC71UD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 60A
- Vce(ON)@25℃(typ): 1.67V
IKD04N60RATMA1

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 8 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
IRG4PH40K
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 2.74V
FGH40N60SMD

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IKA15N60T

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 14.7 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGC4660B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.65V
NGTB15N60EG

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
SGW15N120

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IRGP4069D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.60V
IRGP4640D
电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 600V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.60V

更新于 2026-09-18