更新于 2025-03-07电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 1200V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.70V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 6.5A,Vce(ON)@25℃(typ): 1.85V
- 低导通压降(Vceon)IGBT模块,Vces: 650V,Ic@100℃: 40A,Vce(ON)@25℃(typ): 1.70V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Vce(ON)@25℃(typ): 1.6V
电气特性 Features
电气特性 Features
| Configuration: | Single Quad Collector Triple Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 400 V |
| Maximum Gate Emitter Voltage: | ±6 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 430 V |
| Maximum Continuous Collector Current: | 41 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |