首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 FGH25N120FTDS FGH25N120FTDS 更新于 2025-09-17 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:50 AMaximum Gate Emitter Voltage:±25 VMounting:Through HoleRad Hard:No