首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 RGT40TS65DGC11 RGT40TS65DGC11 更新于 2026-08-04 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:650 VMaximum Continuous Collector Current:40 AMaximum Gate Emitter Voltage:±30 VMounting:Through HoleOperating Temperature:-40 to 175 ℃Rad Hard:No