首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 RJP5001APP-M0#T2 RJP5001APP-M0#T2 更新于 2026-08-05 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:500 VMaximum Continuous Collector Current:300 AMaximum Gate Emitter Voltage:±17 VMounting:Through HoleOperating Temperature:-40 to 150 ℃Rad Hard:No