达林顿管

NJVMJD117T4G

NJVMJD117T4G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

DS2003TMX/NOPB

DS2003TMX/NOPB

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:55 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

MPSA13RLRPG

MPSA13RLRPG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP110

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP110内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP120-S

TIP120-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULQ2003ATDQ1

ULQ2003ATDQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@0.25mA@0.1A|1.4@0.35mA@0.2A|1.7@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

DS2003TMX

DS2003TMX

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:55 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

2SD2142

2SD2142

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    2SD2142内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP147G

TIP147G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

KSE800STU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A|3@40mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP125

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP125内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-28 Tag标签:达林顿管

BD676AS

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:45 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

FZT694BTA

FZT694BTA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:500@100mA@2V|400@200mA@2V|150@400mA@2V
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@100mA|0.5@5mA@400mA V
Maximum Collector Base Voltage:120 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

ULN2803AN

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-28 Tag标签:达林顿管

TIP122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-28 Tag标签:达林顿管