达林顿管

BD678

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BSP52E6327

BSP52E6327

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A|1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

TIP147T

TIP147T

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ULN2003APWG4

ULN2003APWG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

MMBTA14

MMBTA14

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MMBTA14内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ZTX601STZ

ZTX601STZ

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:160 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@50mA@10V|2000@500mA@10V|1000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:180 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

TIP127-S

TIP127-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

2N6036

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V|500@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

NZT7053

NZT7053

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:1000@1A@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ULN2003APGONHZA

ULN2003APGONHZA

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BSP50

BSP50

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:60 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

TD62083AFNG(O,N,EL)

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BD681S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

BST60,115

BST60,115

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:45 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:60 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管

ULN2068B

ULN2068B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-05-01 Tag标签:达林顿管