2ST501T

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电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	60 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:	2@16mA@4A|3@30mA@6A V
Maximum Collector Base Voltage:	60 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	750@3A@3V
Maximum Collector Emitter Saturation Voltage:	2@12mA@3A V
Maximum Collector Base Voltage:	100 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	0.3 A
Minimum DC Current Gain:	10000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:	1.2@10uA@10mA|1.5@0.1mA@100mA V
Maximum Collector Base Voltage:	80 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-03-10

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

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更新于 2025-03-10

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	0.8 A
Minimum DC Current Gain:	10000@100mA@5V|10000@10mA@5V
Maximum Collector Emitter Saturation Voltage:	1.2@0.01mA@10mA|1.5@0.1mA@100mA V
Maximum Collector Base Voltage:	80 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-03-10