达林顿管

TD62783APG(O,S,HZN)

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:2@350mA|1.9@225mA|1.8@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

MJH6284G

MJH6284G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

MMBTA63

MMBTA63

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

2N6035G

2N6035G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

2N6388G

2N6388G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@0.01A@5A|3@0.1A@10A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

BD677ASTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

BD679

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

MJ11033G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:50 A
Minimum DC Current Gain:400@50A@5V|1000@25A@5V
Maximum Collector Emitter Saturation Voltage:2.5@250mA@25A|3.5@500mA@50A V
Maximum Collector Base Voltage:120 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

TIP122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-09 Tag标签:达林顿管

ZTX601B

ZTX601B

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:160 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:5000@50mA@10V|10000@500mA@10V|5000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:180 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

BDX53BG

BDX53BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

TIP100-S

TIP100-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-09 Tag标签:达林顿管

MPSA29

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MPSA29内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-09 Tag标签:达林顿管

MJD112

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD112内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-09 Tag标签:达林顿管

TIP122F

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP122F内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-09 Tag标签:达林顿管