达林顿管

FMMT634QTA

FMMT634QTA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.9 A
Maximum Collector Emitter Saturation Voltage:0.96@5mA@1A|0.75@1mA@100mA|0.8@1mA@250mA|0.85@5mA@500mA|0.93@5mA@900mA V
Maximum Collector Base Voltage:120 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

2STBN15D100T4

2STBN15D100T4

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@0.5A|1.3@4mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

NJVMJD117T4G

NJVMJD117T4G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

MMBTA63LT1G

MMBTA63LT1G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@100mA@5V|5000@10mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

BCV49H6327XTSA1

BCV49H6327XTSA1

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

BSP52

BSP52

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

TIP125

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP125内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-08-06 Tag标签:达林顿管

ULN2803A

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

MMBTA64LT3G

MMBTA64LT3G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

ESM3030DV

电气特性 Features

Configuration:Single Dual Emitter
Type:NPN
Maximum Collector Emitter Voltage:300 V
Peak DC Collector Current:100 A
Minimum DC Current Gain:300(Typ)@85A@5V
Maximum Collector Emitter Saturation Voltage:1.8@0.6A@60A|2.2@2.4A@85A V
Mounting:Screw
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

2SB1580

2SB1580

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

PZTA29

PZTA29

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.01mA@10mA|1.5@0.1mA@100mA V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

ULN2803APG(O,N,HZN)

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

MPSW45AG

MPSW45AG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:25000@200mA@5V|15000@500mA@5V|4000@1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@2mA@1A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管

MMSTA63-7-F

MMSTA63-7-F

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@100uA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-08-06 Tag标签:达林顿管